Doping efficiency of phosphorus doped silicon nanocrystals embedded in a SiO2 matrix
نویسندگان
چکیده
Related Articles Electronegativity and doping in semiconductors J. Appl. Phys. 112, 046101 (2012) High phosphorous doped germanium: Dopant diffusion and modeling J. Appl. Phys. 112, 034509 (2012) A novel method for effective sodium ion implantation into silicon Rev. Sci. Instrum. 83, 075116 (2012) Superconductor-insulator transition controlled by annealing in Ga implanted Si Appl. Phys. Lett. 100, 262602 (2012) Accurate calculation of field and carrier distributions in doped semiconductors AIP Advances 2, 022135 (2012)
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Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers
High-conductive phosphorus-doped Si nanocrystals/SiO2(nc-Si/SiO2) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO2 films are systematically studied by which we find the shift of Fermi level...
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